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DESE

Dec 15

High-energy electron bombardment

In a major breakthrough in the field of graphene based electronics, researchers from the Indian Institute of Science, Bangalore, have shown a big jump in understanding the quantum nature of graphene’s interface with outside world. The research team lead by Prof. Mayank Shrivastava (Department of Electronic Systems Engineering), studied how the overlap of atomic orbitals between Carbon and metal atoms affects the graphene-metal interface. The study has enabled them to invent novel techniques to engineer graphene contact that has the lowest recorded resistance to the external world. Their discovery and subsequent invention, while breaking several records – including the one from IBM’s research centre in T. J. Watson, USA – has eventually allowed achieving the highest transistor performance. This work, which is co-authored by PhD student Adil Meersha and co-investigators Prof. Srinivasan Raghavan and Prof. Navakanta Bhat is showcased at International Electron Device Meeting (IEDM), the world’s most competitive platform in the field of electron devices, which mostly showcases technology and fundamental breakthroughs in the field.

General, Science, Technology