In research to be shared at the prestigious 56th International Reliability Physics Symposium (IRPS), researchers from the Indian Institute of Science Bangalore (IISc) will present a paper that details a breakthrough in significantly improving the reliability limits of 3D FinFET technology in sub-14nm technology for System-on-Chip integration. The study is the result of work in collaboration with Intel that sought to better understand various aspects of electrostatic discharge (ESD), latch-up and hot carrier reliability of ultra-dense FinFET technologies.
Two new studies from the Indian Institute of Bombay (IIT Bombay), Mumbai, show the importance of defects in the arrangement of atoms in a crystal, called dislocations, in shaping the physical properties of metallic alloys.