Scientists have devised a novel approach to combine memory and computation units.
Scientists theoretically probe the atomic properties of the 2D materials under strain
Mumbai/ Apr 18, 2024
Scientists have devised a novel approach to combine memory and computation units.
As conventional memory devices like the hard drives and flash drives, generally made of semiconductor materials reaching limit in terms of their size and storage capacity a new emerging technology- Resistive Random Access Memory (RRAM)- holds the promise of cheaper and efficient replacement to existing technologies.