Researchers find a unique new technique to make stable, low-power graphene transistors
The theme for World Leprosy Day in 2025 is Unite. Act. Eliminate.
Bengaluru/ Jan 30, 2025
Researchers find a unique new technique to make stable, low-power graphene transistors
All the electronic devices that we use today have components made of semiconductors, mostly silicon. In recent years, gallium nitride, another semiconductor, is making its way into electronics. It is better suited for high power and high-frequency applications. Researchers from IISc have developed India’s first-ever e-mode gallium nitride power transistor, whose performance is comparable to some of the best reports till date.
Scientists from the Indian Institute of Science, Bangalore design a novel transistor by combining two different types of transistors in to one. The new hybrid device can switch between a conventional thermionic transistor and a modern tunnelling transistor overcoming many challenges faced before.
Transistors are the backbone of the zillion electronic devices that we use today. While development of these semiconductor devices dates back to four decades, it's applications are ever increasing. Internet of Things is the new application that is transforming the development of transistors. In view of this, scientists at IIT Bombay and SCL ISRO have developed a new kind of Bipolar Junction Transistor that is completely indigenous. The researchers believe a home made technology can see its application in strategic sectors like space and defence.