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FinFET

Bengaluru | Mar 12, 2018
Photo: Dennis C J / Research Matters. From L-R :  Mayank Shrivastava and Milova Paul

In research to be shared at the prestigious 56th International Reliability Physics Symposium (IRPS), researchers from the Indian Institute of Science Bangalore (IISc)  will present a paper that details a breakthrough in significantly improving the reliability limits of 3D FinFET technology in sub-14nm technology for System-on-Chip integration. The study is the result of work in collaboration with Intel that sought to better understand various aspects of electrostatic discharge (ESD), latch-up and hot carrier reliability of ultra-dense FinFET technologies.

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