A team of researchers at the Indian Institute of Technology Delhi (IIT Delhi) has created a cutting-edge photodetector that could greatly enhance high-speed optical communication.

All the electronic devices that we use today have components made of semiconductors, mostly silicon. In recent years, gallium nitride, another semiconductor, is making its way into electronics. It is better suited for high power and high-frequency applications. Researchers from IISc have developed India’s first-ever e-mode gallium nitride power transistor, whose performance is comparable to some of the best reports till date.