Researchers from Indian Institute of Technology Bombay, Mumbai have observed a new phenomenon in a semiconductor quantum dot-- particles of nanometre (a billionth of a meter) size which are also called artificial atoms) made of Cu₂ZnSnS₄  (CZTS). By shining Ultra Violet (UV) light, on the quantum dots immersed in an electrolyte, they noticed an increase in its capacitance. The effect could be engineered to serve as photocapacitors- capacitors that are charged using light.

Indian Institute of Science (IISc), Bengaluru has for the third consecutive year, bagged the top rank in the National Institutional Ranking Framework (NIRF) which was announced by the Minister of Human Resource Development, Shri. Prakash Javadekar on 03 March 2018.

In research to be shared at the prestigious 56th International Reliability Physics Symposium (IRPS), researchers from the Indian Institute of Science Bangalore (IISc)  will present a paper that details a breakthrough in significantly improving the reliability limits of 3D FinFET technology in sub-14nm technology for System-on-Chip integration. The study is the result of work in collaboration with Intel that sought to better understand various aspects of electrostatic discharge (ESD), latch-up and hot carrier reliability of ultra-dense FinFET technologies.

In a first of its kind study in India, scientists from Indian Institute of Technology Bombay (IITB) and National Institute of Solar Energy, New Delhi, conducted a detailed survey at 51 locations across India to check for the degradation in the performance of photovoltaic modules. This study, to establish reliability of the modules, could help India achieve the ambitious dream of 100 GW of solar energy by 2022.